The Dirt on the Cleanroom: Silicon Carbide Power Semiconductor Devices

Ron Olson

By Ron Olson

Electrical Technologies and Systems
Niskayuna, NY USA

Originally posted on GE Global Research’s blog: Edison’s Desk

As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the next few months. In other words, share with you a bit about the technology we’re developing right now, that will change the future.

Every day in our cleanroom, our technology teams are dedicated to a specific technology such as MEMS, Wide Band Gap, Advanced Packaging, Photovoltaic (PV) and Nano. Below is a quick update from our Wide Band Gap team. If you’d like to learn more about our space in general and our team, check out the short clip below.

Currently, we’re developing Silicon Carbide (SiC) power semiconductor devices, including world-leading SiC MOSFET devices at the 1200V and 3300V rating classes.

These devices are capable of:

  • blocking high voltages in the off-state
  • conducting current with low resistance in the on-state
  •  ultra-fast switching speed and high-temperature operation

These advantages over current technology will allow GE to improve energy efficiency while significantly reducing the size and weight of systems for a wide variety of applications including power converters, general controls, and solid state power distribution based products for GE Aviation, Energy and Healthcare.

Look out in the coming weeks for another update!

Ron & team

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One thought on “The Dirt on the Cleanroom: Silicon Carbide Power Semiconductor Devices

  1. Pingback: The Dirt on the Cleanroom: Silicon Carbide Power Semiconductor Devices « NanoSpeed

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